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 Silicon Schottky Diodes
q q q q
BAT 14- ... D
Beam lead technology Low dimension High performance Medium barrier
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D Maximum Ratings Parameter Symbol Values BAT 14-020 D BAT 14-050 D Reverse voltage Forward current Junction temperature Storage temperature range Operating temperature range VR IF Tj Tstg Top 4 100 175 - 65 ... + 150 - 65 ... + 150 BAT 14-090 D BAT 14-110 D 4 50 V mA C Unit Marking - Ordering Code Q62702-D1259 Q62702-D1268 Q62702-D1276 Q62702-D1285 Pin Configuration Package1) D
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
BAT 14- ...D BAT 14- ... D
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage IR = 10 A Diode capacitance VR = 0, f = 1 MHz BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D VF BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D FSSB - - - - rf BAT 14-020 D BAT 14-050 D BAT 14-090 D BAT 14-110 D - - - - 3.5 4.0 7.0 10.0 - - - - 6.0 6.5 6.5 7.0 - - - - - - - - - - - - 0.45 0.47 0.49 0.50 0.55 0.57 0.60 0.65 - - - - - - - - dB V(BR) 4 CT - - - - 0.30 0.20 0.14 0.10 0.35 0.25 0.15 0.12 V - - pF V Values typ. max. Unit
Forward voltage IF = 1 mA
IF = 10 mA
Single sideband noise figure FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz f = 3.0 GHz BAT 14-020 D f = 6.0 GHz BAT 14-050 D f = 9.3 GHz BAT 14-090 D f = 16 GHz BAT 14-110 D Differential forward resistance IF = 10 mA IF = 50 mA
Semiconductor Group
2


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